A ball-indentation method to evaluate the critical stress for dislocation generation in a silicon substrate

Fatigue and Fracture of Engineering Materials and Structures

Volumn 24, Issue 12, 2001, Pages 877-884

  Ohta, H ^a   Miura, H ^a   Kitano, M ^a  

^a HITACHI LTD   (Japan)

Author keywords

Dislocation; Etch pit; Ion implantation; Semiconductor device; Silicon

Indexed keywords

CALCULATIONS; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; ESTIMATION; INDENTATION; ION IMPLANTATION; SEMICONDUCTOR DEVICES; STRESSES; SUBSTRATES; TENSILE TESTING; THERMAL EFFECTS; THIN FILMS;

BALL INDENTATION; CRITICAL STRESS; DISLOCATION GENERATION; SILICON SUBSTRATE;

SEMICONDUCTING SILICON;

EID: 0035665104     PISSN: 8756758X     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1460-2695.2001.00456.x     Document Type: Article

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