The band gap of II-VI ternary alloys in a tight-binding description

Revista Mexicana de Fisica

Volumn 47, Issue 1, 2001, Pages 43-49

  Olguín, Daniel ^a   Baquero, Rafael ^a   De Coss, Romeo ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b DEPARTAMENTO DE FÍSICA APLICADA   (Mexico)

Author keywords

II VI semiconductor alloys; Tight binding calculations

Indexed keywords

EID: 0035584437     PISSN: 0035001X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (55)

1. A. López-Otero, Thin Films 49 (1978) 3.
2. D.J. Olego, J.P. Faurie, S. Sivananthan, and P.M. Raccah, Appl. Phys. Lett. 47 (1985) 1172.
3. Y.M. D'Aubigné et al., J. Cryst. Growth 101 (1990) 650; I. Suemune et al., J. Cryst. Growth 101 (1990) 754; J.B. Mullin et al., J. Cryst. Growth 101 (1990) 1; N. Matsumura, M. Tsubokura, and J. Sarai, J. Cryst. Growth 95 (1989) 525.
4. Y.M. D'Aubigné et al., J. Cryst. Growth 101 (1990) 650; I. Suemune et al., J. Cryst. Growth 101 (1990) 754; J.B. Mullin et al., J. Cryst. Growth 101 (1990) 1; N. Matsumura, M. Tsubokura, and J. Sarai, J. Cryst. Growth 95 (1989) 525.
5. Y.M. D'Aubigné et al., J. Cryst. Growth 101 (1990) 650; I. Suemune et al., J. Cryst. Growth 101 (1990) 754; J.B. Mullin et al., J. Cryst. Growth 101 (1990) 1; N. Matsumura, M. Tsubokura, and J. Sarai, J. Cryst. Growth 95 (1989) 525.
6. Y.M. D'Aubigné et al., J. Cryst. Growth 101 (1990) 650; I. Suemune et al., J. Cryst. Growth 101 (1990) 754; J.B. Mullin et al., J. Cryst. Growth 101 (1990) 1; N. Matsumura, M. Tsubokura, and J. Sarai, J. Cryst. Growth 95 (1989) 525.
7. M.J.S.P. Brasil et al., Appl. Phys. Lett. 58 (1991) 2509.
8. M.J.S.P. Brasil et al., Appl. Phys. Lett. 59 (1991) 1206.
9. K. Ichino et al., J. Electronic Mat. 22 (1993) 445.
10. Z.P. Guan et al., Phys. Rev. B 56 (1997) 9589.
11. D. Olguín, Rev. Mex. Fis. 45 (1999) 271.
12. A.E. García et al., Rev. Mex. Fis. 46 (2000) 249.
13. J.E. Bernard and A. Zunger, Phys. Rev. B 36 (1987) 3199.
14. R. Hill, J. Phys. C 7 (1974) 521.
15. P. Gupta, D. Bhattacharyya, S. Chaudhuri, and A.K. Pal, Thin Solid Films 221 (1992) 154.
16. A.A. El-Shazly et al., Appl. Phys. A 36 (1985) 51.
17. J.A. Van Vechten and T.K. Bergstresser, Phys. Rev. B 1 (1970) 3351.
18. H. Okuyama, Y. Kishita, and A. Ishibashi, Phys. Rev. B 57 (1998) 2257.
19. R. Hill and D. Richardson, J. Phys. C 6 (1973) L115.
20. Borouissa and Aourag, Phys. Stat. Solidi B 199 (1997) 403.
21. S.N. Ekpenuma, C.W. Myles, and J.R. Gregg, Phys. Rev. B 41 (1990) 3582.
22. K.C. Hass, H. Ehrenreich, and B. Velický, Phys. Rev. B 27 (1983) 1088.
23. B.M. Klein, D.A. Papaconstantoupoulos, and L.L. Boyer, Phys. Rev. B 22 (1980) 1946.
24. G. Böhm and K. Unger, Phys. Stat. Sol. B 216 (1999) 961.
25. D.J. Chadi, Phys. Rev. B 16 (1977) 790.
26. K. Shim and H. Rabitz, Phys. Rev. B 57 (1998) 12874.
27. A.B. Chen and A. Sher, Phys. Rev. B 23 (1981) 5360.
28. P.A. Fedders and C.W. Myles, Phys. Rev. B 29 (1984) 802.
29. H. Terauchi et al., Jpn. J. Appl. Phys. 32 (1993) 728.
30. J.C. Slater and G.F. Koster, Phys. Rev. 94 (1954) 1498.
31. P. Vogl, H.P. Hjalmarson, and J.D. Dow, J. Phys. Chem. Solids 44 (1983) 365; W.A. Harrison, Phys. Rev. B 24 (1981) 5835.
32. P. Vogl, H.P. Hjalmarson, and J.D. Dow, J. Phys. Chem. Solids 44 (1983) 365; W.A. Harrison, Phys. Rev. B 24 (1981) 5835.
33. W.A. Harrison. Electronic Structure and the Properties of Solids, (Dover Publications, New York, 1989).
34. A. Kobayashi, O.F. Sankey, and J.D. Dow, Phys. Rev. B 25 (1982) 6367.
35. R. de Coss, D. Olguín, and R. Baquero, to be published.
36. See in particular the discussion related with Figs. 12-14 in Ref. 10.
37. Y. Tokumitsu et al., Jpn. J. Apply. Phys. 28 (1989) L349; Y. Tokumitsu et al., J. Crys. Growth 99 (1990) 455.
38. Y. Tokumitsu et al., Jpn. J. Apply. Phys. 28 (1989) L349; Y. Tokumitsu et al., J. Crys. Growth 99 (1990) 455.
39. I.B. Ermolovich, M.K. Sheǐnkman, V.A. Sanitarov, I.P. Kalinkin, and L.A. Aleksandrova, Sov. Phys. Semicond. 17 (1983) 923.
40. V. Lemos, J.R. Moro, Q.A.G. de Souza, and P. Motisuke, Solid State Comm. 60 (1986) 853.
41. R. Richardson, J. Phys. C 4 (1971) L287; 4 (1971) L339; 5 (1972) L27.
42. R. Richardson, J. Phys. C 4 (1971) L287; 4 (1971) L339; 5 (1972) L27.
43. R. Richardson, J. Phys. C 4 (1971) L287; 4 (1971) L339; 5 (1972) L27.
44. T. Li, H.J. Lozykowski, and J.L. Reno, Phys. Rev. B 46 (1992) 6961.
45. A.G. Areshkin et al., Sov. Phys. Solid State 28 (1986) 2109.
46. A. Ravid, A. Sher, and A. Zussman, J. Appl. Phys. 68 (1990) 3592.
47. B. Toulouse, R. Granger, S. Rolland, and R. Triboulet, J. Physique 48 (1987) 247.
48. A.M. Abo El-Soud, F. El Akkad, S. Hammad, and N.A. Ali, J. Mat. Scie.: Materials in Electronics 2 (1991) 171.
49. J.P. Laurenti et al., J. Appl. Phys. 67 (1990) 645; Höschl, and M. Zvára, Phys. Stat. Sol. B 179 (1993) 107.
50. J.P. Laurenti et al., J. Appl. Phys. 67 (1990) 645; Höschl, and M. Zvára, Phys. Stat. Sol. B 179 (1993) 107.
51. G.L. Hansen, J.L. Schmit, and T.N. Casselman, J. Appl. Phys. 53 (1982) 7099.
52. F.-M. Tong and N.M. Ravindra, Infrared Phys. 34 (1993) 207.
53. D. Bertho et al., Phys. Rev. B 44 (1991) 6118.
54. D. Olguín and R. Baquero, Phys. Rev. B 51 (1995) 16981.
55. D. Olguín and R. Baquero, Phys. Rev. B 50 (1994) 1980.