Electronic states of the antiferromagnet UGa3

Journal of the Physical Society of Japan

Volumn 70, Issue 2, 2001, Pages 538-546

  Aoki, Dai ^a   Suzuki, Norihito ^a   Miyake, Kousaku ^a   Inada, Yoshihiko ^a   Settai, Rikio ^a   Sugiyama, Kiyohiro ^a   Yamamoto, Etsuji ^b   Haga, Yoshinori ^b   Onuki, Yoshichika ^a,b   Inoue, Tetsutaro ^a,c   Kindo, Koichi ^a,c   Sugawara, Hitoshi ^d   Sato, Hideyuki ^d   Yamagami, Hiroshi ^e  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d TOKYO METROPOLITAN UNIVERSITY   (Japan)

^e KYOTO SANGYO UNIVERSITY   (Japan)

Author keywords

dHvA effect; Fermi surface; Hall coefficient; Magnetoresistance; Thermoelectric power; UGa3

Indexed keywords

EID: 0035581939     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.70.538     Document Type: Article

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