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Volumn 50, Issue 6, 2001, Pages 541-544

High-resolution transmission electron microscopy observation of the cross-sectional structure of reconstructed silicon (5,5,12) surface

Author keywords

High index surface; Reconstruction; Silicon; UHV HRTEM

Indexed keywords

CONFERENCE PAPER;

EID: 0035572936     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/50.6.541     Document Type: Conference Paper
Times cited : (8)

References (15)
  • 6
    • 0000954036 scopus 로고
    • Atomic structure of Si and Ge surfaces: Models for (113), (115) and stepped (001) vicinal surfaces
    • (1990) Phys. Rev. B , vol.41 , pp. 5243-5250
    • Ranke, W.1
  • 8
    • 0029341669 scopus 로고
    • Faceting, tricriticality, and attractive interactions between steps in the orientational phase diagram of silicon surfaces between [113] and [5,5,12]
    • (1995) Surf. Sci. , vol.334 , pp. 153-169
    • Song, S.1    Yoon, M.2    Mochrie, S.G.J.3
  • 11
    • 3643079656 scopus 로고    scopus 로고
    • Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces
    • (1996) Surf. Rev. Lett. , vol.4 , pp. 15-23
    • Ranke, W.1    Xing, Y.R.2
  • 15
    • 25044480935 scopus 로고
    • Reconstruction of semiconductor surfaces: Buckling, ionicity, and pair-blonded chains
    • (1982) Phys. Rev. Lett. , vol.49 , pp. 223-226
    • Pandey, K.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.