Formation of polycrystalline silicon films using electrical-current-induced joule heating

Materials Research Society Symposium - Proceedings

Volumn 664, Issue , 2001, Pages

  Andoh, Nobuyuki ^a   Takahashi, Hiroyuki ^a   Sameshima, Toshiyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; GLASS; GRAIN BOUNDARIES; HEATING; IRRADIATION; LASER PULSES; SUBSTRATES;

JOULE HEATING;

POLYSILICON;

EID: 0035560141     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-664-a6.2     Document Type: Conference Paper

References (14)