Optical constants, critical points, and phonon modes of GaAsN single layers

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Leibiger, G ^a   Gottschalch, V ^a   Kasik, A ^a   Rheinlander B ^a   Sik J ^a   Schubert, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; COMPOSITION EFFECTS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRON TRANSITIONS; ENERGY GAP; MATHEMATICAL MODELS; NITROGEN; OPTICAL PROPERTIES; PHONONS; STRAIN; TERNARY SYSTEMS;

CRITICAL POINT ANALYSIS; OPTICAL CONSTANTS; PHONON MODES; POLAR STRENGTH; SPECTROSCOPIC ELLIPSOMETRY;

GALLIUM ALLOYS;

EID: 0035558750     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. The accurate determination of optical properties by ellipsometry
2. Physical properties of III-V semiconductor compounds