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Volumn 664, Issue , 2001, Pages A331-A336
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Films and devices deposited by HWCVD at ultra high deposition rates
a a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
DEFECTS;
GLASS;
PHOTOCURRENTS;
RAMAN SPECTROSCOPY;
SILICON;
SILICON WAFERS;
SUBSTRATES;
X RAY DIFFRACTION ANALYSIS;
CONSTANT PHOTOCURRENTS (CPM);
ELECTRONIC DENSITY;
AMORPHOUS FILMS;
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EID: 0035556792
PISSN: 02729172
EISSN: None
Source Type: Journal
DOI: 10.1557/proc-664-a3.3 Document Type: Article |
Times cited : (5)
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References (25)
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