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Volumn 669, Issue , 2001, Pages
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Si front-end processing - Physics and technology of dopant-defect interactions III
[No Author Info available]
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Author keywords
[No Author keywords available]
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Indexed keywords
FERMI LEVEL;
INTERFACES (MATERIALS);
ION IMPLANTATION;
MATHEMATICAL MODELS;
MOLECULAR BEAM EPITAXY;
POINT DEFECTS;
RAPID THERMAL ANNEALING;
REACTIVE ION ETCHING;
SCANNING ELECTRON MICROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR JUNCTIONS;
SILICON WAFERS;
TRANSMISSION ELECTRON MICROSCOPY;
VLSI CIRCUITS;
BORON TRAPPING;
CONDUCTANCE IMAGING;
EIREV;
LASER THERMAL ANNEALING (LTA);
LATERAL DIFFUSION;
NITRIDE SPACERS;
PREAMORPHIZING SILICON;
SHALLOW JUNCTIONS;
SURFACE PHOTOVOLTAGE (SPV);
MOSFET DEVICES;
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EID: 0035556430
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Review |
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Times cited : (1)
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References (0)
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