Materials and physical properties of novel high-k and medium-k gate dielectrics

Materials Research Society Symposium - Proceedings

Volumn 670, Issue , 2001, Pages K111-K1112

  Liu, Ran ^a   Zollner, Stefan ^a   Fejes, Peter ^a   Gregory, Rich ^a   Lu, Shifeng ^a   Reid, Kim ^a   Gilmer, David ^a   Nguyen, Bich Yen ^a   Yu, Zhiyi ^a   Droopad, Ravi ^a   Curless, Jay ^a   Demkov, Alex ^a   Finder, Jeff ^a   Eisenbeiser, Kurt ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; ENERGY GAP; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; PERMITTIVITY; PHONONS; POLARIZATION; SEMICONDUCTOR DOPING; STRONTIUM COMPOUNDS; THERMODYNAMIC STABILITY; THIN FILMS; TRANSITION METAL COMPOUNDS;

GATE DIELECTRICS;

DIELECTRIC MATERIALS;

EID: 0035556365     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-670-k1.1     Document Type: Article

References (14)