A new IGBT behavioral model

Solid-State Electronics

Volumn 45, Issue 12, 2001, Pages 2069-2075

  Oh, Hyeong Seok ^a   El Nokali, Mahmoud ^a  

^a University of Pittsburgh   (United States)

Author keywords

Behavioral; IGBT; Modeling; Transient

Indexed keywords

COMPUTER PROGRAMMING LANGUAGES; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC LOSSES; SEMICONDUCTOR DEVICE MODELS; TRANSIENTS;

SWITCHING LOSSES;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0035545741     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00149-6     Document Type: Article

References (10)

1. The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device
2. An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor
3. An experimentally verified IGBT model implemented in the SABER circuit simulator
4. A behavioral model of the IGBT for circuit simulation
5. A new IGBT circuit model for SPICE simulation
6. Use of Hammerstein models in identification of nonlinear systems