Temperature-dependent dynamic triggering characteristics of SCR-type ESD protection circuits

Solid-State Electronics

Volumn 45, Issue 12, 2001, Pages 2005-2009

  Jang, Sheng Lyang ^a   Lin, Lien Sheng ^a   Li, Shao Hua ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Breakdown; ESD protection; MOSFET; Silicon controlled rectifier; Trigger voltage

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC DISCHARGES; ELECTRIC FIELD EFFECTS; ELECTROSTATICS; MOSFET DEVICES; THYRISTORS; TRIGGER CIRCUITS; ZENER DIODES;

ELECTROSTATIC DISCHARGES (ESD); TRIGGER VOLTAGES;

ULSI CIRCUITS;

EID: 0035545680     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00243-X     Document Type: Article

References (9)

1. Dynamic triggering characteristics of SCR-type ESD protection circuits
2. Temperature-dependence of steady-state characteristics of SCR-type ESD protection circuits
3. MOSFET-triggering silicon-controlled-rectifiers for electro-static-discharge protection circuits
4. Novel diode-chain triggering SCR circuits for ESD protection
5. An ESD protection scheme for deep submicron ULSI circuits
6. Complementary-LVTSCR ESD protection circuit for submicron CMOS VLSI/ULSI
7. SCR-type ESD protection circuits with variable holding voltage
8. A temperature-dependent MOSFET inversion layer carrier mobility model for device and circuit simulation