Comparative study of metal-semiconductor contact degradation by current pulses on silicon solar cells with two contact types

Solid-State Electronics

Volumn 45, Issue 12, 2001, Pages 2017-2021

  Perez Quintana, I ^a   Martel, A ^a,b   Hernandez L ^a  

^a UNIVERSITY OF HAVANA   (Cuba)

^b INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

Author keywords

I V solar cells characteristics; Metal semiconductor contact

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; PRINTED CIRCUITS; SEMICONDUCTOR METAL BOUNDARIES; SILICON SOLAR CELLS;

CURRENT PULSES; METAL-SEMICONDUCTOR CONTACTS;

ELECTRIC CONTACTS;

EID: 0035545646     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00203-9     Document Type: Article

References (11)

1. Silicon semiconductors data
2. Consistency of double exponential model with the physical mechanisms of conduction for solar cells under illumination
3. A critical study of the effectiveness of the single and double exponential models for I-V characterization of solar cells
4. Numerical analysis of solar cell current-voltage characteristics
5. Mathematical analysis of the efficiency-concentration characteristic of a solar cell
6. New model for I-V characteristic of solar cell generators and its applications
7. Simultaneous fit to I-V characteristics of solar cells
8. Modification of fundamental parameters in the silicon solar cells by current pulses
9. A better approach to the evaluation of the series resistance of solar cells
10. A practical method of analysis of the current-voltage characteristics of solar cells
11. + dopant exponential profiles for silicon solar cells