|
Volumn 19, Issue 4, 2001, Pages 1640-1643
|
Microscopic structure of spontaneously formed islands on the GaAs(001)-(2×4) reconstructed surface
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
ELECTRIC PROPERTIES;
MATHEMATICAL MODELS;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
OPTICAL PROPERTIES;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SCANNING TUNNELING MICROSCOPY;
SURFACE ROUGHNESS;
SURFACE STRUCTURE;
TEMPERATURE MEASUREMENT;
THERMAL EFFECTS;
EQUILIBRIUM ISLAND MORPHOLOGY;
LATTICE-GAS ISING MODEL;
OPTICAL TRANSMISSION THERMOMETRY;
SURFACE RECONSTRUCTION;
SEMICONDUCTING GALLIUM ARSENIDE;
|
EID: 0035535369
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1386376 Document Type: Article |
Times cited : (6)
|
References (20)
|