Improvement of substrate temperature uniformity by using a dual-zone substrate heater in a commercial 4 in. GEN-III molecular beam epitaxy single-wafer reactor

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1554-1557

  Fang, X M ^a   Yurasits, T R ^a   Loubychev, D ^a   Wu, Y ^a   Liu, W K ^a   DeBruzzi, M ^b   Priddy, S ^b   Schiprett, C ^b  

^a IQE INC   (United States)

^b Applied EPI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; HEATING; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TEMPERATURE;

DUAL-ZONE SUBSTRATE HEATER; MOLECULAR BEAM EPITAXY SINGLE-WAFER REACTOR; PHOTOLUMINESCENCE PEAK WAVELENGTH; SHEET RESISTANCE; SOURCE-TO-DRAIN SATURATION CURRENT; SUBSTRATE TEMPERATURE UNIFORMITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035535351     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1383076     Document Type: Conference Paper

References (1)

1. For reference, see Molecular Beam Epitaxy - Applications to Key Materials, edited by R. F. C. Farrow (1998).