High reflectivity symmetrically strained ZnxCdxMg1-x-ySe-based distributed Bragg reflectors for current injection devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1479-1482

  Maksimov, O ^a   Guo, S P ^a   Fernandez, F ^a   Tamargo, M C ^a   Peiris, F C ^b   Furdyna, J K ^b  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; REFLECTION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SUBSTRATES;

CURRENT INJECTION DEVICES; DISTRIBUTED BRAGG REFLECTORS;

MIRRORS;

EID: 0035535296     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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