Theory of laterally nonuniform MOS transistor under weak inversion: A technique for determination of interface parameters

Technical Physics

Volumn 46, Issue 2, 2001, Pages 192-197

  Bormontov, E N ^a   Levin, M N ^a   Vyalykh, S A ^a   Borisov, S N ^a  

^a VORONEZH STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035530078     PISSN: 10637842     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1349275     Document Type: Article

References (19)

1. R. J. van Overstraeten, G. J. Declerck, and P. A. Muls, IEEE Trans. Electron Devices ED-22 (5), 282 (1975).
2. R. J. van Overstraeten, G. J. Declerck, and G. Bronx, IEEE Trans. Electron Devices ED-20 (12), 1154 (1973).
3. R. M. Swanson and J. D. Meindl, IEEE J. Solid-State Circuits SG-7 (4), 140 (1972).
4. E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 46 (5), 1055 (1967).
5. J. R. Brews, J. Appl. Phys. 46 (5), 2181 (1975).
6. C. Werner, H. Bernt, and A. Eder, J. Appl. Phys. 50 (11), 7015 (1979).
7. K. Zeigler and E. Klausmann, Appl. Phys. Lett. 28 (11), 678 (1976).
8. Ionizing Radiation Effects in MOS Devices and Circuits, Ed. by T. P. Ma and P. V. Dressendorfer (Wiley, New York, 1989).
9. H. Terletzki, A. Boden, F. Wulf, and W. R. Fahrner, Phys. Status Solidi A 86 (8), 789 (1984).
10. R. K. Freitag, E. A. Burke, and D. B. Brown, IEEE Trans. Nucl. Sci. 34 (6), 1172 (1987).
11. N. Saks and M. G. Ancona, IEEE Trans. Nucl. Sci. 34 (6), 1348 (1987).
12. M. A. Xapsos, R. K. Freitag, C. M. Dozier, and D. B. Brown, IEEE Trans. Nucl. Sci. 37 (6), 1671 (1990).
13. R. K. Freitag, E. A. Byrke, C. M. Dozier, and D. B. Brown, IEEE Trans. Nucl. Sci. 35 (6), 1203 (1988).
14. P. J. McWhorter and P. S. Winokur, Appl. Phys. Lett. 48 (2), 133 (1986).
15. D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, et al., IEEE Trans. Nucl. Sci. 36 (6), 1816 (1989).
16. Z. Shanfield and M. M. Moriwaki, IEEE Trans. Nucl. Sci. 34 (6), 1159 (1987).
17. S. Sze, in Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984), Vol. 2.
18. E. N. Bormontov and S. V. Lukin, in Proceedings of the 5th International Conference on Simulation of Devices and Technologies, Obninsk, 1996, p. 35.
19. R. J. van Overstraeten, G. J. Declerck, and G. Broux, IEEE Trans. Electron Devices ED-20 (12), 1150 (1973).