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Volumn 223, Issue 1, 2001, Pages 275-280

Raman spectra and electronic properties of HgTeS crystals at high pressure

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[No Author keywords available]

Indexed keywords


EID: 0035529174     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200007)220     Document Type: Article
Times cited : (3)

References (19)
  • 7
    • 0038673514 scopus 로고    scopus 로고
    • Process, equipment, and materials control in integrated circuit manufacturing IV
    • A.J. TOPRAC and KIM DANG
    • V.V. SHCHENNIKOV, in: Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, Eds. A.J. TOPRAC and KIM DANG, Proc. SPIE 3507, 254 (1998)
    • (1998) Proc. SPIE , vol.3507 , pp. 254
    • Shchennikov, V.V.1
  • 9
    • 0004227369 scopus 로고
    • W. PAUL and D.M. WARSCHAUER, McGraw-Hill Book Company, Inc., New York/London
    • W. PAUL and D.M. WARSCHAUER, in: Solids under Pressure, Eds. W. PAUL and D.M. WARSCHAUER, McGraw-Hill Book Company, Inc., New York/London 1963
    • (1963) Solids under Pressure
    • Paul, W.1    Warschauer, D.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.