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Volumn 19, Issue 1, 2001, Pages 299-305
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Preparation of AIN films by pulsed laser deposition using sintered aluminum nitride and elemental aluminum as raw materials
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
ALUMINUM NITRIDE;
COMPOSITION;
CRYSTAL IMPURITIES;
MORPHOLOGY;
NITROGEN;
OXYGEN;
PULSED LASER DEPOSITION;
REACTION KINETICS;
SEMICONDUCTING SILICON;
SINTERING;
SUBSTRATES;
ELECTRON CYCLOTRON RESONANCE MICROWAVE DISCHARGE;
NITROGEN PLASMA;
OXYGEN IMPURITIES;
PLASMA AIDED METHOD;
METALLIC FILMS;
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EID: 0035527668
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1329119 Document Type: Article |
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Times cited : (9)
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References (2)
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