MS interface parameters extracted from current-voltage characteristic of PV device

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 22, Issue 11, 2001, Pages 1439-1443

  Hu, Xiao Ning ^a   Li, Yan Jin ^a   Fang, Jia Xiong ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Current voltage characteristic; HgCdTe PV deice; MS interface

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR DEVICES;

BARDEEN LIMIT; MERCURY CADMIUM TELLURIUM PHOTOVOLTAIC DEVICE; METAL SEMICONDUCTOR INTERFACE; THERMIONIC FIELD EMISSION THEORY;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 0035522248     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)