Performance of the Raith 150 electron-beam lithography system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2499-2503

  Goodberlet, James G ^a   Hastings, J Todd ^a   Smith, Henry I ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; IMAGE QUALITY; POLYMETHYL METHACRYLATES; SCANNING ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

ACCELERATION VOLTAGE; INTRAFIELD DISTORTION;

ELECTRON BEAM LITHOGRAPHY;

EID: 0035519213     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1414018     Document Type: Article

References (9)

1. See the Raith 150 Turnkey Electron-Beam Lithography System technical handout for system details (provided by Raith USA, Inc., Islip, NY).
2. LEO Series 1530 Owners Manual (LEO Electron Microscopy, Inc., Thornwood, NY).
3. H. I. Smith, S. D. Hector, M. L. Schattenburg, and E. H. Anderson, J. Vac. Sci. Technol. B 9, 2992 (1991).
4. J. Orloff, Charged Particle Optics (Chemical Rubber Corp., New York, 1997), p. 376.
5. K.-D. Schock, F. E. Prins, S. Strahle, and D. P. Kern, J. Vac. Sci. Technol. B 15, 2323 (1997).
6. A. Olkhovets and H. G. Craighead, J. Vac. Sci. Technol. B 17, 1366 (1999).
7. E. H. Anderson, V. Boegli, M. L. Schattenburg, D. Kern, and H. I. Smith, J. Vac. Sci. Technol. B 9, 3606 (1991).
8. J. Ferrera, M. L. Schattenburg, and H. I. Smith, J. Vac. Sci. Technol. B 14, 4009 (1996).
9. J. T. Hastings, F. Zhang, M. A. Finlayson, J. G. Goodberlet, and H. I. Smith, J. Vac. Sci. Technol. B 18, 3268 (2000).