A high performance downconverter MMIC for DBS applications

IEICE Transactions on Electronics

Volumn E84-C, Issue 11, 2001, Pages 1679-1688

  Young, Y U N ^a   Takeshi, Fukuda ^a   Taketo, Kunihisa ^a   Osamu, Ishikawa ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

DBS; Downconverter MMIC; Low LO power; MODFET; Noise figure

Indexed keywords

ELECTRIC POWER SUPPLIES TO APPARATUS; FIELD EFFECT TRANSISTORS; FREQUENCY RESPONSE; GAIN CONTROL; INDUSTRIAL APPLICATIONS; INTEGRATED CIRCUIT LAYOUT; SATELLITE COMMUNICATION SYSTEMS;

DIRECT BROADCASTING SATELLITE; DONCONVERTER INTEGRATED CIRCUIT; GALLIUM ARSENIDE MODULATION DOPED TRANSISTOR; NOISE FIGURE; POWER CONSUMPTION;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0035518420     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. All FET front-end for 12 GHz satellite broadcasting reception
2. 12-GHz-band GaAs dual-gate MESFET monolithic mixers
3. A family of low cost high performance HEMT MMICs for commercial DBS applications
4. A dual-channel Ku-band DBS downconverter
5. GaAs monolithic MIC's for direct broadcast satellite receivers
6. 200 W GaAs-based MODFET power amplifier for W-CDMA base stations
7. Surface technology and ESD protection: Towards highly reliable GaAs microwave circuits
8. Reliability aspects of 0.5 μm and 1.0 μm gate low noise GaAs FETs
9. Reliability of power GaAs FETs-Au gates and Al-Au linked gates