Implementation of a neural network HEMT model into ADS

Microwave Journal

Volumn 44, Issue 11, 2001, Pages

  Thompson II, Willie L ^a   Miller, Eric V ^a   White, Carl ^a  

^a MORGAN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED DESIGN SYSTEM; ANGELOV MODEL; GATE DRAIN CAPACITANCE; GATE SOURCE CAPACITANCE; HARMONIC BALANCE; LARGE SIGNAL MODEL;

ALGORITHMS; BACKPROPAGATION; CAPACITANCE; COMPUTER SOFTWARE; ELECTRIC CURRENTS; GATES (TRANSISTOR); MATHEMATICAL MODELS; MULTILAYER NEURAL NETWORKS; OPTIMIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035517788     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (11)

1. Integrated Physics-oriented statistical modeling, simulation and optimization
2. Yield optimization using a GaAs process simulator coupled to a physical device model
3. A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers
4. GaAs FET device and circuit simulation in SPICE
5. Modeling of MESFETs for intermodulation analysis of mixers and amplifiers
6. A new empirical nonlinear model for HEMT and MESFET devices
7. Technology independent large-signal non-quasistatic FET models by direct construction from automatically characterized device data
8. Analysis and optimization of microwave circuits and devices using neural network models
9. A neural network modeling approach to circuit optimization and statistical design
10. A large-signal characterization of an HEMT using a multilayered neural network
11. Implementing a bias dependent large-signal into a well known circuit simulator