메뉴 건너뛰기
Semiconductor Science and Technology
Volumn 16, Issue 11, 2001, Pages 947-953
Estimated effect of germanium and carbon on the Early voltage of a Si1-x-yGexCy heterojunction bipolar transistor
(2)
Biswas, A
a
Basu, P K
a
a
UNIVERSITY OF CALCUTTA
(
India
)
Author keywords
[No Author keywords available]
Indexed keywords
CARBON; CARRIER CONCENTRATION; ELECTRIC POTENTIAL; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;
CURRENT GAIN;
HETEROJUNCTION BIPOLAR TRANSISTORS;
EID
:
0035505803
PISSN
:
02681242
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1088/0268-1242/16/11/311
Document Type
:
Article
Times cited : (
6
)
References (
20
)
1
0003678332
Boston: Academic
(1994)
Germanium-Silicon Strained and Layers Heterostructures
Jain, S.C.
1
2
0001093287
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 3125
Lanzerotti, L.D.
1
Sturm, J.C.
2
Stach, E.
3
Hull, R.
4
Buyuklimanli, T.
5
Magee, C.
6
3
0027556076
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 525
Cressler, J.D.
1
Comfort, J.H.
2
Crabbe, E.F.
3
Patton, G.L.
4
Stork, J.M.C.
5
Sun, J.Y.-C.
6
Meyerson, B.S.
7
4
0006634327
(1995)
IEEE Trans. Electron Devices
, vol.42
, pp. 442
Harame, D.L.
1
Comfort, J.H.
2
Cressler, J.D.
3
Crabbe, E.F.
4
Sun, J.Y.-C.
5
Meyerson, B.S.
6
Tice, T.
7
5
0031103665
(1997)
IEEE Trans. Electron Devices
, vol.42
, pp. 431
Richey, D.M.
1
Cressler, J.D.
2
Joseph, A.J.
3
6
0003127071
(1997)
Thin Solid Films
, vol.294
, pp. 93
Osten, H.J.
1
Kim, M.
2
Lippert, G.
3
Zaumseil, P.
4
7
0030181659
(1996)
IEEE Electron Device Lett.
, vol.17
, pp. 334
Lanzerotti, L.D.
1
Amour, A.S.
2
Liu, C.W.
3
Sturm, J.C.
4
Watanabe, J.K.
5
Theodore, N.D.
6
8
0033900447
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 292
Salmon, S.L.
1
Cressler, J.D.
2
Jaeger, R.C.
3
Harame, D.L.
4
9
0033882892
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 187
Neugroschel, A.
1
Li, G.
2
Sah, C.-T.
3
10
0003514380
Cambridge: Cambridge University Press
(1998)
Fundamentals of Modern VLSI Devices
, pp. 317
Taur, Y.
1
Ning, N.H.
2
11
0003514380
Cambridge: Cambridge University Press
(1998)
Fundamentals of Modern VLSI Devices
, pp. 36
Taur, Y.
1
Ning, N.H.
2
12
0030107495
(1996)
IEEE Trans. Electron Devices
, vol.43
, pp. 457
Krstelj, Z.M.
1
Venkatraman, V.
2
Printz, E.J.
3
Sturm, J.C.
4
Magee, C.W.
5
13
0017014216
(1976)
Solid-State Electron.
, vol.19
, pp. 857
Stotboon, J.W.
1
De Graaff, H.C.
2
14
0000968045
(1992)
Solid-State Electron.
, vol.35
, pp. 1374
Lu, T.C.
1
Kuo, J.B.
2
15
0024752976
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 2043
Iyer, S.S.
1
Patton, G.L.
2
Stork, J.M.C.
3
Meyerson, B.S.
4
Harame, D.L.
5
16
0030108860
(1996)
J. Appl. Phys.
, vol.79
, pp. 3016
Kissinger, W.
1
Osten, H.J.
2
Weidner, M.
3
Eichler, M.
4
17
0029509902
(1995)
Mater. Res. Soc. Symp. Proc.
, vol.379
, pp. 327
Rim, K.
1
Takagi, S.
2
Welser, J.J.
3
Hoyt, J.L.
4
Gibson, J.F.
5
18
0001512309
(1997)
J. Appl. Phys.
, vol.82
, pp. 4977
Osten, H.J.
1
Gaworzewski, P.
2
19
0031104183
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 404
Joseph, A.J.
1
Cressler, J.D.
2
Richey, D.M.
3
Jaeger, R.C.
4
Harame, D.L.
5
20
0032664042
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 1347
Joseph, A.J.
1
Cressler, J.D.
2
Richey, D.M.
3
Nui, G.
4
* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
