Relationship between Bi/Ti composition ratio and O2 concentration for orientation control of MOCVD-grown Bi4Ti3O12 thin films

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 84, Issue 10, 2001, Pages 49-58

  Kijima, Takeshi ^a,b  

^a SHARP CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bi2SiO 5; Bi4Ti3O12; Data retention characteristics; MFMIS; MOCVD; Orientation control

Indexed keywords

ELECTRIC FIELD EFFECTS; FERROELECTRICITY; INSULATING MATERIALS; MAGNETIC HYSTERESIS; MAGNETIC STORAGE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING BISMUTH COMPOUNDS;

ORIENTATION CONTROL;

THIN FILMS;

EID: 0035503075     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.1065     Document Type: Article

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12. Growth of bismuth silicate films on Si and its dielectric properties