Formation of anomalously wide Si(1 1 1)√3 × √3 clean surface and its stability

Surface Science

Volumn 493, Issue 1-3, 2001, Pages 157-165

  Minoda, Hiroki ^a   Sato, Tomoshige ^b   Yagi, Katsumichi ^a   Tanishiro, Yasumasa ^a   Iwatsuki, Masashi ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JEOL LTD   (Japan)

Author keywords

Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction; Surface thermodynamics (including phase transitions)

Indexed keywords

HIGH TEMPERATURE EFFECTS; QUENCHING; SCANNING TUNNELING MICROSCOPY; SUPERCONDUCTING TRANSITION TEMPERATURE; SURFACE PHENOMENA; SURFACE STRUCTURE; THERMODYNAMICS;

SURFACE RELAXATION AND RECONSTRUCTION; SURFACE THERMODYNAMICS;

SEMICONDUCTING SILICON;

EID: 0035500535     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01204-3     Document Type: Conference Paper

References (13)