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Applied Physics A: Materials Science and Processing

Volumn 73, Issue 5, 2001, Pages 585-593

p-type porous-silicon transducer for cation detection: Effect of the porosity, pore morphology, temperature and ion valency on the sensor response and generalisation of the Nernst equation

(8) Zairi, S a Martelet, C a Jaffrezic Renault, N a Vocanson, F b Lamartine, R b M'gaieth R c Maaref H c Gamoudi, M b

a ECOLE CENTRALE DE LYON (France)

b UNIVERSITÉ LYON 1 (France)

c Laboratoire de Physique des Semiconducteurs et Composants Electroniques (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; DOPING (ADDITIVES); ELECTROLYTES; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; POSITIVE IONS; SILICA; SUBSTRATES; THERMAL EFFECTS; TRANSDUCERS;

ION-SENSOR APPLICATIONS; NERNST EQUATION; POROUS-SILICON TRANSDUCERS;

POROUS SILICON;

EID: 0035500315 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390100824 Document Type: Article

Times cited : (8)

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