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Volumn 10, Issue 11, 2001, Pages 2075-2083

A comparative study of Ar and H2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature

(5) Lee, Wen Horng a Lin, Jing Cheng a Lee, Chiapyng a Cheng, Huang Chung b Yew, Tri Rung c

a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c UNITED MICROELECTRONICS CORPORATION (Taiwan)

Author keywords

Chemical vapor deposition; Electron cyclotron resonance; Silicon carbide; Transmission electron microscopy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; CRYSTAL MICROSTRUCTURE; ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METHANE; SILANES; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER GASES;

SILICON CARBIDE;

ARGON; HYDROGEN; INORGANIC COATING; LOW TEMPERATURE; SILICON; SILICON CARBIDE; VAPOR DEPOSITION;

EID: 0035500037 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(01)00482-4 Document Type: Article

Times cited : (13)

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