Erratum: Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS (Thin Solid Films (2000) 369 (29-32) PII: S0040609000008294)

Thin Solid Films

Volumn 397, Issue 1-2, 2001, Pages 296-

  Rosei, F ^a,d   Motta, N ^a   Sgarlata, A ^a   Capellini, G ^b   Boscherini, F ^c  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b ROMA TRE UNIVERSITY   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

^d AARHUS UNIVERSITY   (Denmark)

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Indexed keywords

EID: 0035499590     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01294-9     Document Type: Erratum

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