A 5.8 GHz Si/SiGe VCO with amplitude control for wireless LAN applications

IEICE Transactions on Electronics

Volumn E84-C, Issue 10, 2001, Pages 1437-1441

  Grau, Gunter ^a   Langmann, Ulrich ^a   Winkler, Wolfgang ^b   Knoll, Dieter ^b   Pressel, Klaus ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b IHP ^*

Author keywords

Distributed inductor model; Small size 5.8 GHz VCO

Indexed keywords

ELECTRIC INDUCTORS; ELECTRIC POTENTIAL; LOCAL AREA NETWORKS; OPTIMIZATION; SUBSTRATES; TEMPERATURE; VARIABLE FREQUENCY OSCILLATORS;

AMPLITUDE CONTROL; SILICON GERMANIUM; WIRELESS LOCAL AREA NETWORKS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035483082     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. SiGe & GaAs competitive technologies for RF-applications
2. max Si/SiGe heterojunction bipolar transistors technology with epi-free collector wells
3. Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules
4. A 200 MHz CMOS Q-enhanced LC bandpass filter
5. A general theory of phase noise in electrical oscillators
6. Resistive and inductive skin effect in rectangular conductors
7. A current-folded up-conversion mixer and a VCO with center-tapped inductor in a SiGe-HBT technology for 5 GHz wireless LAN applications
8. Method for modeling of inductors