Redistribution of nitrogen implanted in the crystals of synthetic diamond

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 183, Issue 3-4, 2001, Pages 301-304

  Cherepov, E I ^a   Tishkovsky, E G ^a   Obodnikov, V I ^a   Pal'yanov, Ju N ^b   Sokol, A G ^b   Sobolev, N V ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b SOBOLEV INSTITUTE OF GEOLOGY AND MINERALOGY   (Russian Federation)

Author keywords

Annealing; Diamond; Diffusion; Implantation; Impurity; Nitrogen

Indexed keywords

ANNEALING; DIFFUSION; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SYNTHETIC DIAMONDS;

MACROSCOPIC SCALE;

ION IMPLANTATION;

EID: 0035478376     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00700-5     Document Type: Article

References (11)