Gain enhanced L-band Er3+-doped fiber amplifier utilizing unwanted backward ASE

IEEE Photonics Technology Letters

Volumn 13, Issue 10, 2001, Pages 1067-1069

  Mahdi, M A ^a   Ahmad, H ^b  

^a IOA Corporation   (United States)

^b UNIVERSITY OF MALAYA   (Malaysia)

Author keywords

Erbium; Long wavelength band; Optical amplifier; Wavelength division multiplexing

Indexed keywords

DOPING (ADDITIVES); ERBIUM; LIGHT AMPLIFIERS; OPTICAL PUMPING; SPONTANEOUS EMISSION; WAVELENGTH DIVISION MULTIPLEXING;

AMPLIFIED SPONTANEOUS EMISSION (ASE);

FIBER LASERS;

EID: 0035473372     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.950737     Document Type: Article

References (10)

1. 80 nm ultra-wideband erbium-doped silica fiber amplifier
2. 3+ doped silica fiber amplifier
3. 3+ doped silica fiber amplifier around 1.6 μm
4. Long-wavelength erbium-doped fiber amplifier gain enhanced by ASE end-reflectors
5. 3+ -doped fiber amplifier utilizing self-generated seed signal
6. 980-nm pump-band wavelengths for long-wavelength-band erbium-doped fiber amplifiers
7. Low noise figure, high gain, high conversion efficiency L-band EDFA
8. 3+-doped fiber amplifier for conventional- and long-wavelength bands
9. Enhancement of power conversion efficiency for a L-band EDFA with a secondary pumping effect in the unpumped EDF section
10. Coupled structure for wide-band EDFA with gain and noise figure improvements from C to L-band injection