Broad-band amplification using a novel amplifier topology

IEEE Photonics Technology Letters

Volumn 13, Issue 10, 2001, Pages 1073-1075

  Di Muro, Rodolfo ^a,b,c   Lowe, Dan ^d   Wilson, Steve ^b  

^a IEEE   (United Kingdom)

^b NORTEL NETWORKS   (Canada)

^c Marconi Communications   (United Kingdom)

^d IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Erbium doped silica fibers; Erbium doped tellurite fiber amplifiers; Extended band amplification; Optical amplifiers

Indexed keywords

SPONTANEOUS EMISSION SUPRESSION;

BANDWIDTH; DOPING (ADDITIVES); LIGHT AMPLIFIERS; OPTICAL FIBERS; SPONTANEOUS EMISSION;

BROADBAND AMPLIFIERS;

EID: 0035472962     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.950739     Document Type: Article

References (7)

1. Gain and saturation characteristics of dual-wavelength-pumped silica-fiber Raman amplifiers
2. 76-nm 3-dB gain-band hybrid fiber amplifier without gain-equalizer
3. 3+-doped tellurite fiber amplifier for WDM signals in the 1581-1616 nm wavelength region
4. Demonstration of low PMD and negligible multipath interference in an ultra flat broadband EDFA using a highly doped erbium fiber
5. Broad-band and gain-flattened amplifier composed of a 1.55μm-band and 1.58 μm-band Er-doped fiber amplifier in a parallel configuration
6. A gain-flattened ultra wide band EDFA for high capacity WDM optical communications systems
7. 3+-fiber gain coefficient derived from a dynamic gain tilt technique