Gain tilt control of L-band erbium-doped fiber amplifier by using a 1550-nm band light injection

IEEE Photonics Technology Letters

Volumn 13, Issue 10, 2001, Pages 1070-1072

  Hwang, Seongtaek ^a,b   Cho, Kyuman ^c  

^a IEEE   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Sogang University   (South Korea)

Author keywords

Control source; Erbium doped fiber amplifier; L band; Optical communication; Wavelength division multiplexing

Indexed keywords

LIGHT INJECTION;

DOPING (ADDITIVES); ERBIUM; GAIN CONTROL; LIGHT AMPLIFIERS; LIGHT SOURCES; OPTICAL COMMUNICATION; WAVELENGTH DIVISION MULTIPLEXING;

FIBER LASERS;

EID: 0035472740     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.950738     Document Type: Article

References (9)

1. 1.58-um band gain-flattened erbium-doped fiber amplifiers for WDM transmission systems
2. 3+ -doped fiber amplifier pumped in the 0.98 and 1.48 um bands
3. 3+-doped fiber amplifiers for WDM systems
4. 3+-doped fiber amplifier in a parallel configuration
5. Comparison of amplification characteristics of 1.58 and 1.55 um and EDFA's
6. Long-wavelength erbium-doped fiber amplifier gain enhanced by ASE end-reflectors
7. 3+ doped silica fiber amplifier around 1.6 um
8. High-gain coefficient long-wavelength-band erbium-doped fiber amplifier using 1530-nm band pump
9. Flat gain erbium-doped fiber amplifier in 1570 nm-1600 nm region for dense WDM transmission systems