Back-gate and series resistance effects in LDMOSFETs on SOI

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2410-2416

  Vandooren, Anne ^b,c   Cristoloveanu, Sorin ^a,d   Mojarradi, Mohammad ^a,b   Kolawa, Elizabeth ^b  

^a IEEE   (France)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c University of California Davis   (United States)

^d GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

Device physics; High voltage devices; LDMOSFET; Power devices; Series resistance; SOI

Indexed keywords

LATERAL DOUBLE-DIFFUSED MOS TRANSISTORS; SERIES RESISTANCE;

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 0035471553     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954485     Document Type: Article

References (14)

1. Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors
2. High voltage DMOS power FETs on thin SOI substrates
3. A RF power LDMOS device on SOI
4. Partial SOI LDMOSFETs for high-side switching
5. Back-channel effect on SOI CMOS for high voltage power ICs
6. A 100-V lateral DMOS transistor with a 0.3-μm channel in a 1-μm silicon-film-on-insulator-on-silicon
7. High-voltage silicon-on-insulator (SOI) MOSFETs
8. SOI high voltage LDMOS and LIGBT transistors with a buried diode and surface p-layer
9. Breakdown voltage improvement for thin-film SOI power MOSFETs by a buried oxide step structure
10. Influence of series resistances and interface coupling on the transconductance of fully depleted silicon-on-insulator MOSFETs
11. New method for the extraction of MOSFET parameters
12. Derivative methods for threshold voltage extraction
13. Measurements of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors