Intrinsic MOSFET capacitance coefficients

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2384-2393

  Gummel, H K ^a,b   Singhal, Kumud ^b  

^a IEEE   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

Bulk charge; Capacitance coefficients; Channel voltage; Inversion charge density; MOS transistors; Saturation voltage

Indexed keywords

CAPACITANCE COEFFICIENTS; CHANNEL CHARGE; INVERSION CHARGE DENSITY; SATURATION CHARGE; SHORT-CHANNEL EFFECTS;

APPROXIMATION THEORY; CALCULATIONS; CAPACITANCE; DIFFERENTIATION (CALCULUS); ELECTRIC CHARGE; INTEGRAL EQUATIONS; ITERATIVE METHODS; MATHEMATICAL MODELS;

MOSFET DEVICES;

EID: 0035471243     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954481     Document Type: Article

References (8)

1. Inversion charge modeling
2. Transient analysis of MOS transistors
3. On the small-signal behavior of the MOS transistor in quasistatic operation
4. An MOS transistor charge model for VLSI design
5. A charge sheet capacitance model of short channel MOSFET's for SPICE
6. A simple, continuous, analytical charge/capacitance model for the short-channel MOSFET