A methodology for deep sub-0.25 μm CMOS technology prediction

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2331-2336

  Palankovski, Vassil ^b   Belova, Nadya ^c   Grasser, Tibor ^b   Puchner, Helmut ^a,c   Aronowitz, Shelton ^c   Selberherr, Siegfried ^a,b  

^a IEEE

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c AGERE SYSTEMS   (United States)

Author keywords

Calibration; CMOS technology; Mixed mode device circuit simulation; Simulation software; TCAD

Indexed keywords

CIRCUIT OSCILLATIONS; CMOS INTEGRATED CIRCUITS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; MICROELECTRONIC PROCESSING; OPTIMIZATION;

DEEP SUB-QUARTERMICRON TECHNOLOGY; DEVICE CALIBRATION; MIXED MODE CIRCUIT SIMULATION; MIXED MODE DEVICE SIMULATION; PROCESS CALIBRATION; SIMULATION SOFTWARE; TWO DIMENSIONAL DEVICE SIMULATION;

SEMICONDUCTOR DEVICE TESTING;

EID: 0035471241     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954473     Document Type: Article

References (12)

1. Two-dimensional process simulation program
2. ISE integrated systems engineering AG
3. Two-dimensional device simulation program
4. ISE integrated systems engineering AG
5. Next generation stanford TCAD-PISCES 2ET and SUPREM 007
6. Hydrodynamic mixed-mode simulation
7. High-level TCAD task representation and automation
8. Device simulator calibration for quartermicron CMOS devices
9. The evolution of the MINIMOS mobility model
10. MOSFET modeling into the ballistic regime