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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 A, 2001, Pages 5206-5210

Infrared study of SiH4-adsorbed Si(100) surfaces: Observation and mode assignment of new peaks

(2) Tsukidate, Y a Suemitsu, M a

a TOHOKU UNIVERSITY (Japan)

Author keywords

CVD; Epitaxy; Gas source MBE; Hydrogen; Infrared spectroscopy; Multiple internal reflection; Si(100); Silane

Indexed keywords

ADSORPTION; ANNEALING; CHEMICAL BONDS; EPITAXIAL GROWTH; HYDROGEN; INFRARED SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SILANES; SUBSTRATES; SURFACE CHEMISTRY;

MONOHYDRIDE; MULTIPLE INTERNAL REFLECTION INFRARED SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0035457001 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.5206 Document Type: Article

Times cited : (9)

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