Influence of strain on functional characteristics of nanoelectronic devices

Journal of the Mechanics and Physics of Solids

Volumn 49, Issue 9, 2001, Pages 1925-1935

  Freund, L B ^a   Johnson, H T ^b  

^a Brown University   (United States)

^b BOSTON UNIVERSITY   (United States)

Author keywords

B. semiconductor material; C. finite elements; Thin films

Indexed keywords

CHARGE TRANSFER; CRYSTAL LATTICES; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTOR MATERIALS; STRAIN; THIN FILMS; WAVE EQUATIONS;

NANOELECTRONIC DEVICES;

NANOTECHNOLOGY;

EID: 0035451596     PISSN: 00225096     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-5096(01)00039-4     Document Type: Article

References (10)

1. Inhomogeneous strain in individual quantum dots probed by transport measurements
2. The mechanics of electronic materials
3. The influence of strain on confined electronic states in semiconductor quantum structures
4. Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires
5. Motion of electrons and holes in perturbed periodic fields
6. Valence band engineering in strained-layer structures
7. Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structures
8. Band offsets in semiconductor heterostructures