Polar optical phonon scattering and negative Krömer-Esaki-Tsu differential conductivity in bulk GaN

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 462-466

  Bulutay, C ^a   Ridley, B K ^a   Zakhleniuk, N A ^a  

^a UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

A1. Computer simulation; B1. Nitrides; B2. Semiconducting III V materials; B3. High electron mobility transistors

Indexed keywords

BAND STRUCTURE; COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT EMISSION; LIGHT SCATTERING; PHONONS;

NEGATIVE KROMER-ESAKI-TSU DIFFERENTIAL CONDUCTIVITY; POLAR OPTICAL PHONON (POP) SCATTERING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035451507     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01283-0     Document Type: Article

References (13)