Analysis of a diode-pumped Nd: YVO4 laser passively Q switched with GaAs

Optics and Laser Technology

Volumn 33, Issue 6, 2001, Pages 383-387

  Li, Ping ^a   Wang, Qingpu ^a   Zhang, Xingyu ^a   Wang, Yurong ^a   Li, Shichen ^b   Jingliang, He ^c   Xingqiang, Lu ^c  

^a SHANDONG UNIVERSITY   (China)

^b TIANJIN UNIVERSITY   (China)

^c SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

GaAs; Nd:YVO4 laser; Passive Q switching

Indexed keywords

COMPUTER SIMULATION; LASER PULSES; OPTICALLY PUMPED LASERS; PHOTONS; Q SWITCHING; SEMICONDUCTING GALLIUM ARSENIDE;

SINGLE-PHOTON ABSORPTION (SPA);

NEODYMIUM LASERS;

EID: 0035451326     PISSN: 00303992     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0030-3992(01)00044-5     Document Type: Article

References (10)

1. Passive-Q-switching of Nd: YAG lasers by use of bulk semiconductors
2. 4 microchip laser
3. Q switching of a diode-pumped Nd: YAG laser with GaAs
4. 3F crystal laser characteristics using GaAs as passive Q-switch
5. Theory of transient energy transfer in gallium arsenide
6. Picosecond photorefractive and free-carrier transient energy transfer in GaAs at 1 μm
7. Theory of the optimally coupled Q-switched laser
8. Intra-cavity frequency-doubling of a Nd: YAG laser passively Q-switched with GaAs
9. Optical limiting in GaAs
10. Optimization of passively Q-switched lasers