Simulation of fluorocarbon plasma etching of SiO2 structures

Microelectronic Engineering

Volumn 57-58, Issue , 2001, Pages 599-605

  Kokkoris, G ^a,b   Gogolides, E ^a   Boudouvis, A G ^a,b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

Aspect ratio dependent etching; Plasma etching; SiO2 etching

Indexed keywords

ASPECT RATION DEPENDENT ETCHING (ARDE);

ASPECT RATIO; COMPUTER SIMULATION; DEPOSITION; FABRICATION; PHASE COMPOSITION; PLASMA ETCHING;

SILICA;

EID: 0035450321     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00549-4     Document Type: Article

References (7)