Three-dimensional micromachining for microsystems by confined etchant layer technique

Electrochimica Acta

Volumn 47, Issue 1, 2001, Pages 95-101

  Sun, J J ^a   Huang, H G ^a   Tian, Z Q ^a   Xie, L ^a   Luo, J ^a   Ye, X Y ^b   Zhou, Z Y ^b   Xia, S H ^c   Tian, Z W ^a  

^a XIAMEN UNIVERSITY   (China)

^b TSINGHUA UNIVERSITY   (China)

^c INSTITUTE OF ELECTRONICS   (China)

Author keywords

Confined etchant layer technique (CELT); Electrochemical micromachining; GaAs; Microelectromechanical systems (MEMS); Microsystem

Indexed keywords

ETCHING; LITHOGRAPHY; MICROMACHINING;

CONFINED ETCHANT LAYER TECHNIQUE (CELT);

MICROELECTROMECHANICAL DEVICES;

EID: 0035450258     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(01)00596-5     Document Type: Article

References (2)

1. K.A. Jackson, Processing of semiconductors, in: R.W. Cahn (Ed.), Materials Science and Technology: A Comprehensive Treatment, vol. 16, VCH, Weinheim, 1996.
2. E.W. Becker, W. Ehrfeld, P. Hagman, A. Maner, D. Müenchmayer, Microelectron. Eng. 4 (1986) 34.