Four-angle evaporation method for the preparation of single electron tunneling devices

Microelectronic Engineering

Volumn 57-58, Issue , 2001, Pages 915-918

  Weimann, Thomas ^a   Scherer, Hansjörg ^a   Krupenin, Vladimir A ^b   Müller, Franz ^a   Niemeyer, Jürgen ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

E beam lithography; Single electron tunneling

Indexed keywords

CAPACITANCE; DRY ETCHING; ELECTRIC CHARGE; EVAPORATION; SUBSTRATES;

SINGLE ELECTRON TUNNELING (SET) DEVICES;

ELECTRON TUNNELING;

EID: 0035450095     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00456-7     Document Type: Article

References (6)