Electronic properties of carbon nanotubes with pentagon-heptagon pair defects

Diamond and Related Materials

Volumn 10, Issue 9-10, 2001, Pages 1818-1823

  Hu, Hui Fang ^a,b   Li, Yi Bing ^b   He, Hong Bo ^b  

^a CENTRAL SOUTH UNIVERSITY   (China)

^b Materials Research Institute   (China)

Author keywords

Carbon nanotube; Electronic properties; Tight binding method; Topological defect

Indexed keywords

CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; FERMI LEVEL; PHYSICAL PROPERTIES; TOPOLOGY;

PAIR DEFECTS;

CARBON NANOTUBES;

NANOTUBE;

EID: 0035448830     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(01)00428-9     Document Type: Article

References (26)