Calculation of the current response of the spatially modulated light CMOS detector

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 1892-1902

  Genoe, Jan ^b,c   Coppée, Danniël ^a,b   Stiens, Johan H ^b   Vounckx, Roger A ^a,b   Kuijk, M ^a,b  

^a IEEE

^b VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

^c KHLim   (Belgium)

Author keywords

CMOS analog integrated circuits; Optical receivers; Photodetectors

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRONS; INTEGRATED OPTOELECTRONICS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

CMOS TECHNOLOGY; CURRENT RESPONSE; DIFFUSION EQUATION; MINORITY CARRIERS; SPATIALLY MODULATED LIGHT CMOS DETECTOR;

PHOTODETECTORS;

EID: 0035446014     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944174     Document Type: Article

References (12)

1. Optical chip interconnects: Economically viable
2. A VLSI-compatible high-speed silicon photodetector for optical data link applications
3. Spatially modulated light detector in CMOS with sense-amplifier receiver operating at 180 Mb/s for optical data link applications and parallel optical interconnects between chips
4. Experimental study of the spatially-modulated light detector
5. 2 chip area operating at 200 Mb/s/ch for parallel optoelectronic interconnects
6. Switching time in junction diodes and transistors