Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique

Semiconductor Science and Technology

Volumn 16, Issue 9, 2001, Pages 798-805

  Gruzinskis, V ^a   Shiktorov, P ^a   Starikov, E ^a   Zhao, Jian H ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON DEVICES; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS; POISSON EQUATION; SEMICONDUCTING GALLIUM COMPOUNDS;

BOLTZMANN TRANSPORT; CONTINUOUS WAVE OPERATION MODE; PARASITIC CONTACT RESISTANCE; PULSED MODE; TRANSFERRED ELECTRON DEVICES;

MICROWAVE POWER TRANSMISSION;

EID: 0035444160     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/9/311     Document Type: Article

References (20)