Calibrated scanning capacitance microscopy investigations on p-doped Si multilayers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1808-1812

  Basnar, B ^a   Golka, S ^a   Gornik, E ^a   Harasek, S ^a   Bertagnolli, E ^a   Schatzmayr, M ^b   Smoliner, J ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b AMS AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; HIGH TEMPERATURE OPERATIONS; MOS DEVICES; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

SCANNING CAPACITANCE MICROSCOPY (SCM);

MULTILAYERS;

EID: 0035439897     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1396645     Document Type: Article

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15. 3 the theoretical SCR is about 100 nm (see Sze, Ref. 13). Assuming a tip with 100 nm radius, we get a diameter for the true SCR of: 100 nm+tip diameter+ 100 nm=400 nm.