Development of an etchant for selectivity etching TiWNx in the presence of electroplated 95%Pb-5%Sn solder

IEEE Transactions on Components and Packaging Technologies

Volumn 24, Issue 3, 2001, Pages 425-430

  Ramanathan, Lakshmi N ^a   Mitchell, Doug ^a  

^a MOTOROLA INC   (United States)

Author keywords

Cu etching; Flip chip; Hydrogen peroxide; Pb Sn solder; Selective etching; TiW; TiWN; UBM; Underbump metallurgy

Indexed keywords

COMPOSITION; DECOMPOSITION; ELECTROPLATING; ETCHING; HYDROGEN PEROXIDE; SILICON WAFERS; SOLDERING ALLOYS; STATISTICAL METHODS; TEMPERATURE; TITANIUM ALLOYS;

ETCHANT; SELECTIVE ETCHING; UNDERBUMP METALLURGY;

FLIP CHIP DEVICES;

EID: 0035439791     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/6144.946489     Document Type: Article

References (22)

1. Studies of the Ti-W/Au metallization on aluminum
2. Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology
3. The evolution of silicon wafer cleaning technology
4. The chemistry of the semiconductor industry
5. Dependence of thin-oxide films quality on surface microroughness
6. Particle removal from silicon wafer surface in wet cleaning process
7. Heated SC1 solution for selective etching and resist particulate matter
8. 2 cleaning solutions
9. 2- ions