Chemical and mechanical adhesion mechanisms of sputter-deposited metal on epoxy dielectric for high density interconnect printed circuit boards

IEEE Transactions on Components and Packaging Technologies

Volumn 24, Issue 3, 2001, Pages 416-424

  Martin, Lara J ^a,b,c   Wong, C P ^a,b,c  

^a IEEE   (United States)

^b MOTOROLA INC   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Atomic force microscopy (AFM); Build up; Chemical adhesion mechanism; Design of experiments (DOE); Dielectric; Epoxy; High density interconnect (HDI); Interconnect substrate; Mechanical adhesion mechanism; Metallize; Printed circuit board (PCB); Scanning electron microscopy (SEM); Sputter; Standard Gibbs free energy of formation; Statistical tools methodology; Vacuum deposit; X ray photoelectron spectroscopy (XPS)

Indexed keywords

CHEMICAL ADHESION MECHANISMS; DESIGN OF EXPERIMENTS; HIGH DENSITY INTERCONNECTS; MECHANICAL ADHESION MECHANISMS; THERMODYNAMIC INFORMATION;

ADHESION; ATOMIC FORCE MICROSCOPY; DEPOSITION; GIBBS FREE ENERGY; METALLIZING; PLASMA ETCHING; PRINTED CIRCUIT BOARDS; SCANNING ELECTRON MICROSCOPY; STATISTICAL METHODS; SUBSTRATES; TRANSITION METALS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC MATERIALS;

EID: 0035439607     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/6144.946488     Document Type: Article

References (7)

1. Substrate requirements for effective integration of chip scale packages and multichip modules
2. Spectroscopic studies of the chemical properties of thin metal films on poly(ether imide)
3. Sputter reduction of oxides by ion bombardment during Auger depth profile analysis
4. Depth profile analysis of thin oxide films by Auger electron spectroscopy