Oxygen ion beam assisted etching of single crystal diamond chips using reactive oxygen gas

Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 8, 2001, Pages 477-481

  Kiyohara, S ^a   Mori, K ^a   Miyamoto, I ^b   Taniguchi, J ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; OXYGEN; PRESSURE EFFECTS; REACTIVE ION ETCHING; SATURATION (MATERIALS COMPOSITION); SINGLE CRYSTALS; SURFACE ROUGHNESS; THERMAL EFFECTS;

DIAMOND CHIPS; ETCHING RATES; GAS FLUX; ION ENERGY; ION INCIDENT ANGLE; OXYGEN ION BEAM ASSISTED ETCHING; REACTIVE OXYGEN GAS;

DIAMONDS;

EID: 0035428701     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1011851818981     Document Type: Article

References (7)

1. Nanotechnology - Integrated processing systems for ultra-precision and ultra-fine products